Analysis of dielectric, impedance and electrical properties of interfacial layer: AlN

Yıldız D., TATAROĞLU A.

Journal of Materials Science: Materials in Electronics, cilt.34, sa.12, 2023 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 34 Sayı: 12
  • Basım Tarihi: 2023
  • Doi Numarası: 10.1007/s10854-023-10235-x
  • Dergi Adı: Journal of Materials Science: Materials in Electronics
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, MEDLINE, Metadex, Civil Engineering Abstracts
  • Gazi Üniversitesi Adresli: Evet

Özet

The purpose of this study is to investigate the electric and dielectric properties of Au/Ti/AlN/n-Si device with using admittance measurements. Aluminum nitride (AlN) epitaxial template on n-Si substrate was deposited by a hydride vapor phase epitaxy (HVPE) technique. Au/Ti contact was thermally evaporated on AlN thin film. Thus, admittance measurements (Y = G + iωC) of the fabricated device were performed and analyzed for frequencies ranging from 1 to 1000 kHz and at room temperature. The C–V and G/ω–V characteristics shown a strong frequency dependence. This behavior is related to the interface traps changing with applied ac signal. In addition, the dielectric parameters, conductivity, and electric modulus of the device were extracted from capacitance and conductance data. The obtained results suggest that the prepared device can be used as a capacitor in electronic circuits.