Investigation of inhomogeneous barrier height for Au/n-type 6H-SiC Schottky diodes in a wide temperature range

Guzel T., Bilgili A. K., ÖZER M.

SUPERLATTICES AND MICROSTRUCTURES, cilt.124, ss.30-40, 2018 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 124
  • Basım Tarihi: 2018
  • Doi Numarası: 10.1016/j.spmi.2018.10.004
  • Dergi Adı: SUPERLATTICES AND MICROSTRUCTURES
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.30-40
  • Anahtar Kelimeler: Schottky diode, 6H-SiC, Richardson constant, Gaussian distribution of barrier, Barrier inhomogeneity, ELECTRON-EMISSION MICROSCOPY, DOUBLE-GAUSSIAN DISTRIBUTION, I-V-T, CHARACTERISTIC PARAMETERS, VOLTAGE CHARACTERISTICS, CAPACITANCE-VOLTAGE, DEPENDENCE, TRANSPORT, SEMICONDUCTOR, INTERFACE
  • Gazi Üniversitesi Adresli: Evet

Özet

Curent-Voltage (I-V) properties of Au/6H-SiC/Au Schottky diodes are investigated and results are analised dependent on temperature at 80-400 K range. Fundamental parameters such as ideality factors (n), barrier heights (Phi(bo)), saturation currents (I-o) are calculated for this diode. Also, series resistance (R-s) is calculated with different methods. Richardson curves are plotted for this structure and Richardson constant (A*) is calculated. Results are compared with literature. Gaussian distribution is examined by using barrier inhomogeneity. Parameters belonging to Gaussian disribution are calculated and results are compared with previous studies done by different authors.