Investigation on photovoltaic performance of Cu2SnS3 thin film solar cells fabricated by RF-sputtered In2S3 buffer layer

Akcay N., Gremenok V. F., Ozen Y., Buskis K. P., Zaretskaya E. P., Özçelik S.

Journal of Alloys and Compounds, cilt.949, 2023 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 949
  • Basım Tarihi: 2023
  • Doi Numarası: 10.1016/j.jallcom.2023.169874
  • Dergi Adı: Journal of Alloys and Compounds
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, INSPEC, Metadex, Public Affairs Index, Civil Engineering Abstracts
  • Anahtar Kelimeler: Cu2SnS3, Cu2SnS3 heterojunction, Cd-free buffer layer, Sulfurization time, Thin film solar cells
  • Gazi Üniversitesi Adresli: Evet

Özet

A two-step process was used to prepare Cu2SnS3 films in this study: first, precursor stacks were deposited using a magnetron sputtering technique, and then the stacks were annealed in sulfur-containing atmosphere at various times. Utilizing a variety of characterization techniques, it was thoroughly examined how sulfurization time affected the films’ structural, morphological, optical, and electrical characteristics. X-ray diffraction and Raman spectroscopy measurements indicated that two structural polymorphs (tetragonal and monoclinic) of Cu2SnS3 co-existed in the films. Surface and cross-sectional images obtained by scanning electron microscopy showed that the microstructures of the films were entirely changed to well-grown crystal structures at 30 min and 40 min sulfurization times. In2S3/Cu2SnS3 stacks were prepared by the deposition of In2S3 films on the absorber layers sulfurized for 30 and 40 min by RF magnetron sputtering method. The fabrication of Ni/Al/Ni/AZO/i:ZnO/In2S3/Cu2SnS3/Mo/SLG-structured devices was done using both thermally annealed and non-annealed In2S3/Cu2SnS3 stacks. Secondary ion mass spectroscopy studies of the devices revealed that the indium diffused from In2S3 layer into the Cu2SnS3 absorber to a certain depth. The efficiency values of the devices were found to have been slightly enhanced with the annealing of the In2S3/Cu2SnS3 stacks. The solar cell with the maximum efficiency (η) of 3.12 %, open-circuit voltage (VOC) of 0.265 mV, short-circuit current (JSC) of 37.90 mA/cm2, and fill factor (FF) of 0.31 was produced by thermally annealed In2S3/Cu2SnS3 stack with an absorber layer sulfurized for 40 min.