Akademik Veri Yönetim Sistemi
9th International Conference on Materials Science and Nanotechnology for Next Generation, Ankara, Türkiye, 22 - 24 Ekim 2022, ss.63
The II- VI class of compound thin films are promising material for electro-optic applications. ZnSe which belongs to this group, receives considerable attention with its wide band gap and high electrical conductivity [1]. ZnSe thin films have a wide range of applications such as solar cells, light emitting diodes [2] and optical detection devices when deposited on silicon crystal substrates [3]. In this paper, ZnSe thin film was deposited with the RF sputtering technique, which is commonly used due to its high homogeneity and uniform thickness advantages of film deposition [4]. The effect of top metal contacts on the electrical characteristics of ZnSe metal-insulator-metal diodes is studied. The basic electrical parameters were observed strongly dependent on the metal contact selection [5]. The contacts were fabricated on the ZnSe thin film using the evaporation system with the help of a circular mask with equal thicknesses of Au, Ag and Al. From the result of the I-V characterization, the ideality factor (ɳ), barrier height (Φb0) and series resistance (Rs) values, which are the main electrical parameters, were calculated. It was seen that the electrical parameters of the device with Au contact were more compatible with the literature than Ag and Al contacts.