The numerical analysis of the GaAs/c-InN solar photovoltaic cell (SPC) hetero-structure has been investigated by means of an analytical solar cell model in the temperature range 200-400 K to determine and develop solar cell performance. Temperature-band gap dependency for GaAs and InN materials has been determined by Varshni and Passler models. Then, the performance of the SPC was obtained by basic electrical parameters such as short circuit current density, open circuit voltage and conversion efficiency. For the proposed GaAs/c-InN SPC, theoretical calculations were predicted optimum electrical parameters, J(SC), V(OC)and eta were 30.47 mA/cm(2), 1.60 V and 30.55% at room temperature under AM1.5G spectrum, respectively. Additionally, it was observed that with the increase in the cell temperature, J(sc)increases slightly due to the energy band gap narrowing whereas V(oc)decreases, thereby leading to the decrease in the efficiency of SPC. This theoretical study can be helpful in supporting the developed of high efficiency new generation solar cell by studying the role of different hetero-structure materials.