Akademik Veri Yönetim Sistemi
3rd International Natural Science, Engineering and Material Technologies Conference, Gazimagusa, Kıbrıs (Kktc), 21 Eylül 2023, ss.26
In order to see the effect of pure-PVA and (CdTe-doped PVA) interlayers on the electrical characteristics, both Au/PVA/n-Si (MPS1) and Au/(CdTe:PVA)/n-Si (MPS2) type Schottky barrier diodes (SBDs) were grown on the same phosphor-doped n-Si wafer in same conditions. For this purpose, both the current-voltage (I-V) and capacitance-voltage (C-V) measurements were performed in wide range of voltage at room temperature. Some basic electrical parameters such as saturation current (Is), ideality factor (n), rectification-ratio (R.R.=IForward/IReverse), barrier height B.H. (bo), and series/shunt resistances (Rs / Rsh) were calculated from the I-V data for two type SBDs and compared each other. The values of doping donor atoms (Nd), BH, depletion layer width (Wd), and maximum electric field (Em) were also calculated from the reverse bias C-2vs V plots. The Nssvs (Ec-Ess) profile for two SBDs were obtained from the forward bias I-V data by considering voltage dependent nand BH. All these experimental results indicated that the used (CdTe:PVA) interlayer at Au/n-Si interface are considerable improved the performance Au/n-Si SBD in respect of lower values of leakage current, n, Nssand higher RR, BH, and shunt resistance when compared pure PVA interlayer and so especially (CdTe:PVA) interlayer can be used successfully instead of conventional insulators for its favored specifications like low cost, easy fabrication processes, and flexibility features.