In this study, Al/(ZnO-PVA)/p-Si (MPS type) Schottky diodes (SDs) were fabricated instead of metal-semiconductor (MS) type SDs with traditional insulator interfacial layer. Additionally, basic electrical parameters of these MPS-type SDs (such as doping acceptor atoms (N-A), depletion layer width (W-D), series resistance (R-s), barrier height (phi(B)), and surface states/traps (N-ss/N-it)) were found as a function of gamma-irradiation by using the capacitance/conductance-voltage (C/G-V) measurements. These measurements under 0-60 kGy radiation doses show that radiation-induced N-ss are more effective in the depletion layer. On the other hand, voltage-dependent profiles of R-s and N-ss were also obtained using Nicollian-Brews and Castagne-Vapaille methods, respectively. Additionally, the C/G-V characteristics were corrected before irradiation and after 60 kGy doses by considering the effects of R-s. These calculations show that R-s is more effective especially in the accumulation region and therefore, it must be considered in the calculations. All these results have indicated that MS-type SDs with (ZnO-PVA) polymer interfacial layer are very sensitive to gamma-irradiation. Hence, they can be successfully used as MPS-type detectors instead of MIS/MOS-type detectors. Hence, they can be successfully used as MPS-type detectors instead of MIS/MOS-type detectors, since polymer layers can be easily grown compared to insulator/oxide layers. Also, they are cheaper, lighter, more flexible, and require low energy consumption. In conclusion, it can be said that although all parameters were affected by gamma-irradiation, no significant defect/deterioration was observed in applied dose range which would hinder the operation of these MPS-type SDs.