The structural, optical, electrical and electrical-optical properties of a double-junction GaAsP light-emitting diode (LED) structure grown on a GaP (100) substrate by using a molecular beam epitaxy technique were investigated. The p-n junction layers of GaAs1-xPx and GaAs1-yPy, which form the double-junction LED structure, were grown with two different P/As ratios. High-resolution x-ray diffraction (HRXRD), photoluminescence (PL), and current-voltage (I-V) measurements were used to investigate the structural, optical and electrical properties of the sample. Alloy composition values (x, y) and some crystal structure parameters were determined using HRXRD measurements. The phosphorus compositions of the first and second junctions were found to be 63.120% and 82.040%, respectively. Using PL emission peak positions at room temperature, the band gap energies (E-g) of the first and second junctions were found to be 1.867 eV and 2.098 eV, respectively. In addition, the alloy compositions were calculated by Vegard's law using PL measurements. The turn-on voltage (V-on) and series resistance (R-s) of the device were obtained from the I-V measurements to be 4.548 V and 119, respectively. It was observed that the LED device emitted in the red (664.020 nm) and yellow (591.325 nm) color regions.