Ku-band GaAs mHEMT MMICandRFfront-end module for space applications


Arican G. O. , AKÇAM N. , Yazgan E.

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2020 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası:
  • Basım Tarihi: 2020
  • Doi Numarası: 10.1002/mop.32613
  • Dergi Adı: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS

Özet

This article presents a Ku-band Low Noise Amplifier (LNA) Monolithic Microwave Integrated Circuit (MMIC) and RF front-end module for space applications. LNA MMIC was developed with utilizing 0.07 mu m GaAs m-HEMT process. Noise Figure (NF) and gain results of LNA module were measured as 1.3 and 43 dB, respectively and OIP3 was measured as +20 dBm at the ambient temperature. The LNA module was tested in the temperature range between -25 degrees C and 75 degrees C and small signal gain and NF variation were less than 3 and 0.8 dB, respectively. This article describes the MMIC LNA design, mechanical chassis design, WR75 waveguide-to-microstrip design, and measurement results of the LNA front-end module.