Spatial stabilization of Townsend discharge in a modified ionization cell with symmetrical short gaps between semiconductor plate and electrodes

Salamov B., Akinoglu B., Lebedeva N.

JOURNAL OF PHYSICS D-APPLIED PHYSICS, cilt.32, sa.16, ss.2068-2074, 1999 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 32 Sayı: 16
  • Basım Tarihi: 1999
  • Doi Numarası: 10.1088/0022-3727/32/16/316
  • Dergi Adı: JOURNAL OF PHYSICS D-APPLIED PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.2068-2074
  • Gazi Üniversitesi Adresli: Hayır

Özet

A Townsend-type discharge generated in a modified ionization cell with symmetrical short gaps between a high-resistivity semiconductor plate and two planar electrodes is studied. The spatial stabilization of the gas discharge cell with a planar GaAs semiconductor plate is studied over a wide range of gas pressure values 101-342 Torr. The characteristics of the system are obtained both without and with illumination of the semiconductor plate with light of a particular wavelength range to control the photoconductivity of the material. The semiconductor material is found to stabilize the discharge. It is shown that generation of carriers by a gas discharge establishes a positive feedback. A qualitative discussion of this effect is given, which includes avalanche formation in a system having high-resistivity semiconductor for the Townsend discharge region. Recording of the current-voltage characteristic between parallel-plane electrodes is realized.