Electrical characterization of Au/ZnO/TiO2/n-Si and (Ni/Au)/ZnO/TiO2/n-Si Schottky diodes by using current-voltage measurements

Kınacı B., Asar T., Cetin S. Ş., Özen Y., Kizilkaya K.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, vol.14, no.11-12, pp.959-963, 2012 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 14 Issue: 11-12
  • Publication Date: 2012
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.959-963
  • Keywords: ZnO, TiO2, DC magnetron sputtering, Current-voltage characteristics, Scothky diodes, I-V-T, SERIES RESISTANCE, INTERFACE STATES, BARRIER HEIGHT, C-V, TEMPERATURE, AU/TIO2/N-SI, EXTRACTION, ANATASE, FILMS
  • Gazi University Affiliated: Yes


In this study, we fabricated two types Schottky diodes (SDs), Au/ZnO/TiO2/n-Si (MIS-1) and (Ni/Au)/ZnO/TiO2/n-Si (MIS-2), to investigate main electrical parameters such as ideality factor (n), barrier height (Phi(b)), interface states (N-ss) and series resistance (R-s). ZnO/TiO2 thin film was deposited on polycrystalline n-type Si substrate using DC magnetron sputtering system. The analysis of current-voltage (I-V) measurements of ZnO/TiO2/n-Si Schottky diodes (SDs) were performed with two different rectifier contacts as Au and Ni/Au at room temperature. The values of n, Phi(b) and R-s were calculated as 1.80, 0.88 eV and 106.12 Omega for MIS-1 and 1.97, 0.82 eV and 50.13 Omega for MIS-2 SDs, respectively, from forward-bias I-V curves. The energy distribution profile of Nss for both SDs was obtained from the forward bias I-V measurements by taking the bias dependence of the effective barrier height (Phi(e)) into account. In addition, the values of Phi(b) and R-s of MIS-1 and MIS-2 SDs were determined using Cheung's and Norde's functions and the obtained results have been compared with each other.