Investigation of dielectric properties of heterostructures based on ZnO structures

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Selcuk A. H. , Orhan E. , Ocak S. , Selcuk A. B. , GÖKMEN U.

MATERIALS SCIENCE-POLAND, cilt.35, sa.4, ss.885-892, 2017 (SCI İndekslerine Giren Dergi) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 35 Konu: 4
  • Basım Tarihi: 2017
  • Doi Numarası: 10.1515/msp-2017-0108
  • Sayfa Sayıları: ss.885-892


The voltage and frequency dependence of dielectric constant epsilon', dielectric loss epsilon", electrical modulus M", M', loss tangent tan delta and AC electrical conductivity sigma(AC) of p-Si/ZnO/PMMA/Al, p-Si/ZnO/Al and rho-Si/PMMA/Al structures have been investigated by means of experimental G-V and C-V measurements at 30 kHz, 100 kHz, 500 kHz and 1 MHz in this work. While the values of epsilon', epsilon", tan delta and sigma(AC) decreased, the values of M' and M '' increased for these structures when frequency was increased and those of p-Si/ZnO/Al and p-Si/PMMA/Al were comparable with those of p-Si/ZnO/PMMA/Al. The obtained results showed that the values of p-Si/ZnO/PMMA/Al structure were lower than the values of p-Si/ZnO/Al and p-Si/PMMA/Al.