Investigation of dielectric properties of heterostructures based on ZnO structures

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Selcuk A. H., Orhan E., Ocak S., Selcuk A. B., Gökmen U.

MATERIALS SCIENCE-POLAND, vol.35, no.4, pp.885-892, 2017 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 35 Issue: 4
  • Publication Date: 2017
  • Doi Number: 10.1515/msp-2017-0108
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.885-892
  • Gazi University Affiliated: Yes


The voltage and frequency dependence of dielectric constant epsilon', dielectric loss epsilon", electrical modulus M", M', loss tangent tan delta and AC electrical conductivity sigma(AC) of p-Si/ZnO/PMMA/Al, p-Si/ZnO/Al and rho-Si/PMMA/Al structures have been investigated by means of experimental G-V and C-V measurements at 30 kHz, 100 kHz, 500 kHz and 1 MHz in this work. While the values of epsilon', epsilon", tan delta and sigma(AC) decreased, the values of M' and M '' increased for these structures when frequency was increased and those of p-Si/ZnO/Al and p-Si/PMMA/Al were comparable with those of p-Si/ZnO/PMMA/Al. The obtained results showed that the values of p-Si/ZnO/PMMA/Al structure were lower than the values of p-Si/ZnO/Al and p-Si/PMMA/Al.