Frequency and Temperature Dependent Interface States and Series Resistance in Au/SiO2/p-Si (MIS) Diode

Korucu D., Duman S.

SCIENCE OF ADVANCED MATERIALS, vol.7, no.7, pp.1291-1297, 2015 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 7 Issue: 7
  • Publication Date: 2015
  • Doi Number: 10.1166/sam.2015.2043
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1291-1297
  • Keywords: Frequency Dependence, Voltage Dependence, Interface States, Series Resistance, SCHOTTKY-BARRIER DIODES, CURRENT-VOLTAGE, DIELECTRIC-PROPERTIES, PARAMETERS, SI, PROFILE
  • Gazi University Affiliated: Yes


In this study, some electrical parameters of Au/SiO2/p-Si metal-insulator-semiconductor diode such as the barrier height and ideality factor and series resistance have been determined from the forward bias current-voltage characteristics in the temperature range 140-340 K. The capacitance-voltage and conductance-voltage characteristics of Au/SiO2/p-Si diode have been investigated over a wide frequency and temperature range of 3 kHz-1 MHz and 140-340 K, respectively. The experimental current voltage, capacitance-voltage and conductance-voltage characteristics of diode show frequency and temperature dependency. Also, the series resistance values of Au/SiO2/p-Si diode have been determined using capacitance-voltage characteristics. The density of interface states (N-ss) has been obtained from Hill-Coleman method. It has been determined that the series resistance (R-s) and the interface states (N-ss) decrease with increasing frequency.