In this study, some electrical parameters of Au/SiO2/p-Si metal-insulator-semiconductor diode such as the barrier height and ideality factor and series resistance have been determined from the forward bias current-voltage characteristics in the temperature range 140-340 K. The capacitance-voltage and conductance-voltage characteristics of Au/SiO2/p-Si diode have been investigated over a wide frequency and temperature range of 3 kHz-1 MHz and 140-340 K, respectively. The experimental current voltage, capacitance-voltage and conductance-voltage characteristics of diode show frequency and temperature dependency. Also, the series resistance values of Au/SiO2/p-Si diode have been determined using capacitance-voltage characteristics. The density of interface states (N-ss) has been obtained from Hill-Coleman method. It has been determined that the series resistance (R-s) and the interface states (N-ss) decrease with increasing frequency.