The determination of the temperature and voltage dependence of the main device parameters of Au/7%Gr-doped PVA/n-GaAs-type Schottky Diode (SD)


Evcin Baydilli E., Altindal Ş., Tecimer H., Kaymaz A., Uslu Tecimer H.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.31, no.20, pp.17147-17157, 2020 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 31 Issue: 20
  • Publication Date: 2020
  • Doi Number: 10.1007/s10854-020-03799-5
  • Journal Name: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
  • Journal Indexes: Science Citation Index Expanded, Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Page Numbers: pp.17147-17157

Abstract

There are several methods used to obtain the basic diode parameters that affect the diode quality of Schottky diodes (SD) such as ideality factor (n), barrier height (phi(Bo)), and series resistance (R-s). In this study, it is aimed to compare the results using Ohm's law, Thermionic Emission theory (TE), Norde and Cheung-Cheung functions. TheI-Vmeasurement of the Au/7%Gr-doped PVA/n-GaAs type SD was taken in the range of 80-360 K in 20 K steps. Considering that each method is effective in the different voltage region of theI-Vcurve and the parameters are strongly voltage-dependent, the results are compatible with each other. Also, the interface states (N-ss) were calculated with and withoutR(s)for each temperature value, and it was attained that the effect ofR(s)reducedN(ss)values by almost 1 degree. This result reveals the importance of theR(s)parameter for SDs. As a result, it is plainly represented that the basic diode parametersn,R(s)and phi(Bo)values are strongly dependent on temperature and voltage, and affected by barrier inhomogeneity and surface states.