Research Information System
Journal of Electronic Materials, 2026 (SCI-Expanded, Scopus)
The purpose of this study is to analyze the photovoltaic (PV) parameters of TiO2/CN-i/SiO2/p-Si and TiO2/SiO2/p-Si semiconductor/insulator/semiconductor (SIS) solar cells (SCs). The organic semiconductor selected was the phenanthroimidazole-imine derivative (CN-i). The TiO2 thin film showed the anatase phase, with (101) and (004) characteristic reflections in x-ray diffraction (XRD) measurements. The optical bandgaps of TiO2 and CN-i thin films are calculated as 3.38 eV and 2. 76 eV from UV–Vis spectra. To characterize the PV properties, the samples are irradiated through the transparent TiO2/CN-i double layers, and the parameters are obtained from J–V (current density–voltage) measurements in dark and under different illumination intensities; 10 mW/cm2, 15 mW/cm2, 25 mW/cm2, 50 mW/cm2, 100 mW/cm2. The current density increased considerably, ensuring a good PV conversion. Fill factor (FF) also increased from 55.12% to 69.10 % after inserting the CN-i dye under 100 mW/cm2 illumination. Also, the ionization energy level, electron affinity, and photoconductivity values are obtained by photoemission yield spectroscopy and photoconductivity measurements. Transient photocurrent plots are analyzed and the device illuminated at 100 mW/cm2 demonstrates an outstanding power conversion efficiency (PCE) of 18.24% with supported incident photon-to-current efficiency (IPCE) data and transient photocurrent traces in the same conditions.