Modulation of the Electrostatic and Quantum Capacitances of Few Layered Graphenes through Plasma Processing

Narayanan R., Yamada H., KARAKAYA M., Podila R., Rao A. M., Bandaru P. R.

NANO LETTERS, cilt.15, sa.5, ss.3067-3072, 2015 (SCI-Expanded) identifier identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 15 Sayı: 5
  • Basım Tarihi: 2015
  • Doi Numarası: 10.1021/acs.nanolett.5b00055
  • Dergi Adı: NANO LETTERS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.3067-3072
  • Anahtar Kelimeler: Graphene, charged defects, plasma processing charge correlation, quantum capacitance, energy storage, RAMAN-SPECTROSCOPY, GRAPHITE, DISORDER
  • Gazi Üniversitesi Adresli: Hayır

Özet

It is shown that charged defect generation, through argon ion-based plasma processing, in few layer graphene, could substantially enhance the electrical capacitance for electrochemical energy storage. Detailed consideration of the constituent space charge and quantum capacitances were used to delineate a new length scale, correlated to electrically active defects contributing to the capacitance, and was found to be smaller than a structural correlation length determined through Raman spectroscopy, The study offers insights into an industrially viable method (i.e., plasma processing) for modifying and enhancing the energy density of graphene-based electrochemical capacitors.