Resistivity, magnetoresistivity and Hall effect measurements in n-type Te-doped InSb grown by the LEC technique were carried out as a function of temperature (14-350 K) and magnetic field (0-1.35 T). The measurement results are analyzed using the conventional and quantitative mobility spectrum analysis methods. It is found that the impurity levels arising from LEC technique and intentionally dopants have a strong influence on both the electron and magneto transport properties. The temperature dependence of the magnetoresistivity coefficient shows an overall increase by representing two minima as the temperature decreases. These minima are associated with two types of impurities. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.