Electrical characterization of Au/n-Si (MS) diode with and without graphene-polyvinylpyrrolidone (Gr-PVP) interface layer

TATAROĞLU A., ALTINDAL Ş., Azizian-Kalandaragh Y.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.32, sa.3, ss.3451-3459, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 32 Sayı: 3
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1007/s10854-020-05091-y
  • Dergi Adı: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Sayfa Sayıları: ss.3451-3459
  • Gazi Üniversitesi Adresli: Evet

Özet

In this research, for determining the effects of the (Gr-PVP) interfacial layer, two types of diodes (Au/n-Si and Au/(Gr-PVP)/n-Si) were performed on the same n-Si wafer with the same ohmic and rectifier contacts. Graphene-doped PVP nanocomposite film was grown on the n-Si wafer by a spin-coating method. Therefore, the basic electrical parameters of them were extracted from the I-V and Z-V-f characteristics and compared in detail. The higher values of n and lower values of BH obtained from Cheung's functions compared to TE theory were ascribed to their voltage-dependent. The frequency-dependent diffusion potential (V-D), doping-donor atoms (N-D), depletion layer width (W-D), surface potential (psi(s)), R-s, and BH values of the MPS diode were also extracted from the impedance characteristics in the frequency range of 10-10(3) kHz.