On the Negative Capacitance of the Au/ZnO/n-GaAs Structures in the Capacitance-Voltage Plots at the Accumulation Zone for High Frequencies

ERBİLEN TANRIKULU E., Akin B.

JOURNAL OF ELECTRONIC MATERIALS, cilt.51, sa.8, ss.4437-4445, 2022 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 51 Sayı: 8
  • Basım Tarihi: 2022
  • Doi Numarası: 10.1007/s11664-022-09689-2
  • Dergi Adı: JOURNAL OF ELECTRONIC MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, PASCAL, Applied Science & Technology Source, Chemical Abstracts Core, Chimica, Compendex, Computer & Applied Sciences, INSPEC
  • Sayfa Sayıları: ss.4437-4445
  • Anahtar Kelimeler: Negative capacitance, surface states, series resistance, inductive behavior, ELECTRICAL CHARACTERISTICS, DIELECTRIC-PROPERTIES, INTERFACIAL LAYER, ANOMALOUS PEAK, SOLAR-CELL, THIN-FILMS, N-GAAS, DIODES, ZNO, TEMPERATURE
  • Gazi Üniversitesi Adresli: Evet

Özet

To investigate the capacitance and conductance characteristics of the Au/ZnO/n-GaAs (MIS) structures, impedance measurements were conducted at 200 kHz and 2 MHz frequency zones at ambient temperature. The experimental findings demonstrate that both the C and G/omega values have frequency dispersion in the accumulation zone. In addition, negative capacitance (NC) behavior has been found in the C-V graphs for high frequencies at roughly 1.5 V, and this behavior becomes more apparent as frequency increases. The minimum values of C observed at the accumulation zone correspond to the maximum values of G/omega, and this change between C and G/omega can be defined as inductive behavior. The impedance method was used to determine essential parameters that can significantly affect the performance of the structure, such as series resistance (R-s) and concentration distribution of surface states (N-ss). Also, some other parameters such as the Fermi energy level (E-F), doping donor atom concentration (N-D), and barrier height (phi(B)) were determined from reverse bias C-2 versus V graphs for all frequencies.