Current-voltage (I-V) characteristics of Au/InGaAs/n-GaAs Schottky barrier diodes


KINACI B., Corekci S., Kizilkaya K., Ozcelika S.

Optoelectronics and Advanced Materials, Rapid Communications, cilt.6, ss.327-330, 2012 (SCI Expanded İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 6
  • Basım Tarihi: 2012
  • Dergi Adı: Optoelectronics and Advanced Materials, Rapid Communications
  • Sayfa Sayıları: ss.327-330

Özet

In this study, the forward and reverse bias current-voltage (I-V) characteristics of Au/InGaAs/n-GaAs Schottky barrier diodes (SBDs) have been investigated at room temperature. InGaAs epilayer was grown on (100) oriented n-GaAs substrate using V80-H solid source Molecular Beam Epitaxy (MBE) system. Atomic Force Microscope (AFM) was used in order to study the surface properties of InGaAs epilayer. The AFM measurement was performed by using an Omicron variable temperature STM/AFM instrument. The electrical parameters such as barrier height (Φb), ideality factor (n), series resistance (Rs) and interface states (Nss) of Au/InGaAs/n-GaAs SBDs have been calculated by using forward and reverse bias I-V measurements. The energy distribution of interface states of the structure was obtained from the forward bias I-V measurements by taking the bias dependence of the effective barrier height (Φe) into account. In addition, the values of Rs and Φb were determined by using Cheung's methods and results have been compared with each other.