Akademik Veri Yönetim Sistemi
Materials Science and Engineering: B, cilt.327, 2026 (SCI-Expanded, Scopus)
In this study, the temperature-dependent dielectric properties of a Cu-doped diamond-like carbon (DLC) interfacial-layered Schottky device (SD), fabricated by the electrochemical deposition method, were systematically investigated in terms of the dominant polarization mechanisms. Impedance measurements, performed over the temperature range of 80–410 K, were used to calculate the dielectric constant (ε'), dielectric loss (ε″), loss tangent (tan(δ)), ac conductivity (σac), and complex electric modulus (M⁎), including its real (M′) and imaginary (M″) components. The results reveal that all dielectric parameters exhibit three distinct behaviours within three temperature regions, namely low-temperature (LTs: 80–170 K), moderate-temperature (MTs: 200–290 K), and high-temperature (HTs: 300–410 K) regimes. This behavior indicates a pronounced sensitivity of the DLC interfacial layer to temperature. It was also observed that different polarization mechanisms, including dipolar, trapping-related, electronic, and space-charge polarizations, become dominant depending on the temperature and applied voltage range. Owing to the heterogeneous structure of the SD, the contribution of Maxwell–Wagner polarization, as a specific form of space-charge polarization, becomes particularly significant in the HTs region. Moreover, Cu doping leads to an increase in carrier density within the DLC layer, enhancing the tunneling probability and strengthening space-charge polarization through the increased availability of free carriers.