The effect of PVP: BaTiO3 interlayer on the conduction mechanism and electrical properties at MPS structures

Barkhordari A., ÖZÇELİK S., Altmdal S., Pirgholi-Givi G., Mashayekhi H., AZIZIAN-KALANDARAGH Y.

PHYSICA SCRIPTA, cilt.96, sa.8, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 96 Sayı: 8
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1088/1402-4896/abeba8
  • Dergi Adı: PHYSICA SCRIPTA
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Chemical Abstracts Core, Compendex, INSPEC, zbMATH
  • Anahtar Kelimeler: Schottky barrier diode, polyvinylpyrrolidone (PVP), BaTiO3-PVP interlayer, conduction mechanism, electric properties, CURRENT-TRANSPORT MECHANISMS, BARIUM-TITANATE NANOPARTICLES, SCHOTTKY DIODES, VOLTAGE-DEPENDENCE, SERIES RESISTANCE, TEMPERATURE-RANGE, INTERFACE STATES, AL/P-SI, AU/N-SI, PARAMETERS
  • Gazi Üniversitesi Adresli: Evet

Özet

In this paper, the influence of doping barium titanate in the polyvinyl pyrrolidine polymer sandwiched between the metal-semiconductor on the conduction mechanism and the electrical properties of the formed diode has been examined. The barium titanate nanostructure is prepared by microwave assisted method. The TGD/DTA, x-ray diffraction pattern (XRD), Field Emission Scanning Electron Microscope (FE-SEM), Electron Dispersive x-ray (EDX) and UV-Vis spectroscopy analyses are performed in order to determine the calcination temperature, average crystalline size, surface morphology, purity specification, and optical properties of the prepared barium titanate nanostructure, respectively. The main electrical parameters such as the ideality factor (n), barrier height (BH), leakage current (I-0), shunt (R-sh) and series (R-s) resistances of the Al/PVP: BaTiO3/p-Si (MPS) and Al/p-Si (MS) structures are calculated by Thermionic Emission (TE), Norde, and Cheung methods by measuring the I-V characteristics of the both diodes at +/- 6 V and compared with each other. Moreover, the surface states density (N-ss) as a function of energy at forward bias and the current conduction mechanisms at forward and revers bias are investigated. The rectifying ratio of MPS diode is enhanced by reducing the n, R-s, N-ss, I-0 and by increasing shunt resistance (R-sh), BH due to presence of interfacial layer. Therefore, PVP: BaTiO3 interlayer can be a suitable alternative replacement of intrinsic interlayer for utilization in the nanoscale electronic and optoelectronic devices and circuits.