Evidences on double Gaussian (DG) distribution of barrier heights in Au/(PVA-Fe3O4)/n-Si Schottky barrier diodes (SBDs) from the current-voltage (I-V) measurements in wide temperature

ARSLAN ALSAÇ A., SERIN T., ALTINDAL Ş., KALANDARAGH Y.

Journal of Optoelectronics and Advanced Materials, cilt.23, sa.7-8, ss.339-347, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 23 Sayı: 7-8
  • Basım Tarihi: 2021
  • Dergi Adı: Journal of Optoelectronics and Advanced Materials
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Compendex
  • Sayfa Sayıları: ss.339-347
  • Anahtar Kelimeler: Current-voltage-temperature (I-V-T) characteristics, Double Gaussian distribution of barrier heights, Temperature dependence of surface states, CURRENT-TRANSPORT MECHANISMS, DIELECTRIC-PROPERTIES, CONDUCTION MECHANISMS, ELECTRON-TRANSPORT, AU/N-GAAS, DEPENDENCE, RANGE, FREQUENCY
  • Gazi Üniversitesi Adresli: Evet

Özet

© 2021 National Institute of Optoelectronics. All rights reserved.The I-V characteristics of Au/(PVA-Fe3O4)/n-Si SBDs were measured in wide-temperature (80-320K) to specify the possible conduction-mechanisms (CMs). Structural characterization of (PVA-Fe3O4) interlayer was done using (XRD) which, confirmed that the formation of Fe3O4 nanostructures has spinel cubic-crystal structure and space group. The mean-size of clusters was found as 50-200 nm and nanostructure-size was found less than 20 nm from the SEM images. The forward bias Ln(I)-V characteristics show that barrier-height (BH) increasing with increasing temperature whereas ideality-factor (n) decreases. Such changes in the BH and n with temperature was successfully explained by thermionic-emission theory with Double-Gaussian-distribution (DGD) of the BHs.