A simple parallel conduction extraction method (SPCEM) for MODFETs and undoped GaN-based HEMTs

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LİŞESİVDİN S. B. , Balkan N., Ozbay E.

MICROELECTRONICS JOURNAL, cilt.40, sa.3, ss.413-417, 2009 (SCI İndekslerine Giren Dergi) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 40 Konu: 3
  • Basım Tarihi: 2009
  • Doi Numarası: 10.1016/j.mejo.2008.06.006
  • Sayfa Sayıları: ss.413-417


We report a simple method to extract the mobility and sheet carrier densities of conduction channels in conventional modulation doped field-effect transistor (MODFET) structures and unintentionally doped GaN-based high-electron mobility transistor (HEMT) structures for a special case. Extraction of the conduction channels from the magnetic field-dependent data can present number of problems; even the most recent methods encounter great difficulties. For the GaN-based HEMT structures which have lower mobilities and larger effective masses than that of GaAs-based counterparts, these difficulties become more prominent. in this study, we describe a simple method for magnetotransport analysis to extract conduction channels successfully for a special case that is commonly encountered: one bulk channel and one two-dimensional electron gas (2DEG) channel. Advantage of this method is mainly its simplicity. The analysis can be done with only two magnetic field-dependent measurements per temperature step. The method is applied to the magnetotransport results of an unintentionally doped AlGaN/AlN/GaN/AIN heterostructure over a temperature range of 29-350 K and in a magnetic field range of 0-1.5 T (mu B < 1). The results are then compared with those obtained using a commercial package for these calculations namely: quantitative mobility spectrum analysis (QMSA). (C) 2008 Elsevier Ltd. All rights reserved.