A novel type heterojunction photodiodes formed junctions of Au/LiZnSnO and LiZnSnO/p-Si in series

Aydin H., TATAROĞLU A., Al-Ghamdi A. A., Yakuphanoglu F., El-Tantawy F., Farooq W. A.

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.625, ss.18-25, 2015 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 625
  • Basım Tarihi: 2015
  • Doi Numarası: 10.1016/j.jallcom.2014.11.035
  • Dergi Adı: JOURNAL OF ALLOYS AND COMPOUNDS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.18-25
  • Anahtar Kelimeler: Photodiode, Lithium-zinc-tin-oxide (LZTO), Sol gel, THIN-FILM TRANSISTORS, ELECTRICAL-PROPERTIES, VOLTAGE CHARACTERISTICS, TEMPERATURE-DEPENDENCE, CONDUCTANCE TECHNIQUE, NEGATIVE CAPACITANCE, SCHOTTKY CONTACTS, DEVICE, DIODE, PARAMETERS
  • Gazi Üniversitesi Adresli: Evet

Özet

Lithium-zinc-tin-oxide thin films were prepared by sol gel method. The structural and optical properties of the films were investigated. The optical band gaps of the LiZnSnO films were found to be 3.78 eV for 0 at.% Li, 3.77 eV for 1 at.% Li, 3.87 eV for 3 at.% Li and 3.85 eV for 5 at.% Li, respectively. Au/LiZnSnO/p-Si/Al photodiodes were fabricated using a lithium-zinc-tin-oxide (LZTO, Li-Zn-Sn-O) layer grown on p-Si semiconductor. The electrical characteristics of the photodiodes were analyzed by current-voltage, capacitance-voltage and conductance-voltage measurements. The reverse current of the diodes increases with both the increasing illumination intensity and Li content. It was found that the Li-doped ZTO photodiodes exhibited a better device performance than those with an undoped ZTO. (C) 2014 Elsevier B.V. All rights reserved.