On the changes in the dielectric, electric modulus, and ac electrical-conductivity in the Al/(C(29)H(32)O17)/p-Si (MPS) structures in wide range of frequency and voltage


PHYSICA B-CONDENSED MATTER, vol.623, 2021 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 623
  • Publication Date: 2021
  • Doi Number: 10.1016/j.physb.2021.413345
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, INSPEC, Metadex, Civil Engineering Abstracts
  • Keywords: (C29H32O17) interlayer, Dielectric spectroscopy, Frequency and voltage dependence, Surface states and polarization effects, SI, DEPENDENCE, POLARIZATION, PARAMETERS, DIODES
  • Gazi University Affiliated: Yes


In this study, C29H32O17 was deposited onto p-type Si crystal to obtain Al/(C29H32O17)/p-Si (MPS) structures. The complex-dielectric-constant (epsilon ' and epsilon ''), loss-tangent (tan delta), electric-modulus (M ' and M '') and ac electricalconductivity (sigma ac) of these structures were investigated using impedance-dielectric-spectroscopy. All these parameters were found strong function of frequency and voltage due to a special-distribution of surface-states (Nss) at depletion and series-resistance (Rs) at accumulation-region. While the epsilon ' , epsilon '' and tan delta values decrease with frequency increment, M ' and sigma ac values increase. But, M ''-V and M ''-ln(f) plots have a peak for each bias-voltage, respectively. The magnitude of M ''-V peak decreases with frequency increment, its position shifts towards to higher bias voltages due to restructure and reordering of Nss, Rs and polarization effects. Experimental-results confirmed that the polarization can be easily occurred at low-intermediate frequencies and the majority of Nss, consequently, contribute to the deviation of dielectric properties of the MPS structure.