Effect of CuO doping on the performance of LaB6 interlayer films in Al/CuO:LaB6/p-Si/Al diodes

Ocaya R. O., Al-Sehemi A. G., Tataroğlu A., Dere A., Erol I., Aksu M., ...Daha Fazla

PHYSICA B-CONDENSED MATTER, cilt.666, 2023 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 666
  • Basım Tarihi: 2023
  • Doi Numarası: 10.1016/j.physb.2023.415111
  • Dergi Adı: PHYSICA B-CONDENSED MATTER
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Copper oxide (CuO), Frequency effect, Lanthanum hexaboride (LaB6), One-step photoemission, Photonic device, Transient response
  • Gazi Üniversitesi Adresli: Evet

Özet

This study investigates the fabrication and performance analysis of Al/CuO:LaB6/p-Si/Al diodes with CuO-doped LaB6 interlayer films of varying concentrations (1%, 5%, and 10%). Experimental evidence demonstrates the limitations of 0% CuO doping, as pure LaB6 lacks a significant barrier height, resulting in ohmic behavior unsuitable for intended applications. Through comprehensive analyses under varying illuminations (20-100 mW/cm2) and frequencies (10 kHz-1 MHz), the study reveals that controlling CuO doping in LaB6 significantly enhances the effective barrier height at the LaB6:CuO heterojunction, improving rectification properties. This enhancement enables the diode to be well-suited for high-speed photonic devices utilizing one-step photoemission. The findings contribute to the development of high-performance LaB6-based devices, advancing photonic technologies by emphasizing the advantages of CuO doping.