Effects of gamma irradiation on electrical parameters of metal-insulator-semiconductor structure with silicon nitride interfacial insulator layer

Ertugrul R., TATAROĞLU A.

RADIATION EFFECTS AND DEFECTS IN SOLIDS, cilt.169, sa.9, ss.791-799, 2014 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 169 Sayı: 9
  • Basım Tarihi: 2014
  • Doi Numarası: 10.1080/10420150.2014.950265
  • Dergi Adı: RADIATION EFFECTS AND DEFECTS IN SOLIDS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.791-799
  • Anahtar Kelimeler: radiation effects, series resistance, MIS structure, interface states, SERIES-RESISTANCE, SCHOTTKY DIODES, RAY IRRADIATION, C-V, SI-SIO2 INTERFACE, MOS STRUCTURES, OXIDE LAYER, RADIATION, CAPACITANCE, STATES
  • Gazi Üniversitesi Adresli: Evet

Özet

The effects of gamma irradiation on electrical parameters of Au/Si3N4/n-Si (MIS) structure were investigated by using the capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements. The MIS structure was irradiated using gamma-radiation source at a dose rate of 0.69 kGy/h. The C-V and G/omega-V measurements were carried out at a total dose range of 0-100 kGy for five different frequencies (1, 10, 100, 500 and 1000 kHz). The obtained results showed that the C and G/omega values decrease with the increasing radiation dose due to the irradiation-induced defects at the interface. Also, the observed decrease in the C and G/omega values with the increasing frequency was explained on the basis of interface states (N-ss). The values of series resistance (R-s) increase with the increasing radiation dose. To obtain the real capacitance and conductance of the capacitor, the measured values of C and G/omega were corrected to eliminate the effect of series resistance. The values of N-ss were determined by using the conductance method and were decreased with the increasing radiation dose.