Dielectric, ac conductivity and electric modulus studies at MPS structure with (Cu2O-CuO)-doped PVA interfacial layer

Buyukbas-Ulusan A., Yeriskin S. A. , Tataroglu A., Balbasi M., Azizian-Kalandaragh Y.

Optoelectronics and Advanced Materials, Rapid Communications, vol.14, pp.256-260, 2020 (SCI-Expanded) identifier identifier


© 2020, National Institute of Optoelectronics. All rights reserved.We have investigated the ac conductivity, complex dielectric and modulus properties of Au/(Cu2O-CuO) doped-PVA/n-Si (MPS) structure. The parameters such as dielectric constant (ε'), dielectric loss (ε''), loss tangent (tanδ), ac conductivity (σac) and complex electric modulus (M*) were obtained using admittance (capacitance and conductance) values measured in 10 kHz-5 MHz frequency range and 1 V-4 V positive voltage range. While the ε' and ε'' value increase with decrease in frequency, the σac value decreases. The values of real (M') and imaginary (M") part of complex modulus were obtained from the ε' and ε'' values. M' value increases with increasing frequency and decrease with increasing voltage. The M'' versus logf plots indicate give a peak.