Energy relaxation of hot electrons by LO phonon emission in AlGaN/AlN/GaN heterostructure with in situ Si3N4 passivation


Atmaca G., Ardali S., NARİN P., Kutlu E., LİŞESİVDİN S. B. , Malin T., ...Daha Fazla

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.659, ss.90-94, 2016 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 659
  • Basım Tarihi: 2016
  • Doi Numarası: 10.1016/j.jallcom.2015.11.056
  • Dergi Adı: JOURNAL OF ALLOYS AND COMPOUNDS
  • Sayfa Sayıları: ss.90-94

Özet

In this study, energy relaxation mechanisms of electrons in AlGaN/AlN/GaN High Electron Mobility Transistor (HEMT) structures with and without in situ Si3N4 passivation were investigated. Although the physical parameters of the samples were all different, the electron-temperature dependent power loss values were found to be identical. The study also sought to fit the current theoretical power loss in the LO-phonon regime to the experimental power-loss per carrier results. The calculated power loss offered a reasonably fit to the experimental data in the electron temperature range between 75 and 250 K. (C) 2015 Elsevier B.V. All rights reserved.