A Comparison of GaN-Based Cascode and E-mode HEMTs Using Bridgeless Totem Pole PFC

Saglam B., Aksit M. H., Tamyürek B.

2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022, Michigan, Amerika Birleşik Devletleri, 9 - 13 Ekim 2022 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Doi Numarası: 10.1109/ecce50734.2022.9947785
  • Basıldığı Şehir: Michigan
  • Basıldığı Ülke: Amerika Birleşik Devletleri
  • Anahtar Kelimeler: AC/DC Converter, Bridgeless Totem-Pole PFC, Cascode GaN, E-Mode GaN, Wide-bang-gap transistors
  • Gazi Üniversitesi Adresli: Evet

Özet

© 2022 IEEE.Wide-band-gap transistors such as Gallium-Nitrite (GaN)-based products are being frequently used in various power electronics applications due to their distinct advantages over Silicon based transistors. Since GaN-based transistors are efficient at high switching frequencies and offer zero Qrr, they are often preferred in Bridgeless Totem-Pole PFC (BTPPFC) topologies. There are two types of GaN-based switch structures such as, Cascode and Enhancement (E) mode, as they have some pros and cons from design architecture. Although Cascode mode switches can operate at higher voltage levels, the switching frequency can be lower than E-mode switches. So, there are efficiency and switching-related challenges between these two structures. This paper presents the design of high frequency GaN-based BTPPFC and the comparison of Cascode and E-mode structure of GaN-based products. A BTPPFC has been designed with digital controller, working in continuous conduction mode after completed the validations of gate driver circuit, sensor measurements and so on.