Physica B: Condensed Matter, cilt.582, 2020 (SCI-Expanded)
© 2019The influence of the inorganic/organic interfacial layer on the electric and dielectric performance of both Al/p-Si (MS) and Al/(Bi2Te3– Bi2O3– TeO2– PVP)/p-Si (MPS) type SBDs have been investigated. The material for the interfacial layer has been synthesized by the ultrasound-assisted method. FE-SEM, XRD, EDS, and UV–Vis techniques have been used for structural and optical characteristics of the prepared sample. The main electrical, dielectric, and electrical modulus parameters of these SBDs were obtained from the I–V and impedance spectroscopy measurements and using different calculation methods. The surface states (Nss) have been calculated. The real and imaginary components of the permittivity (ε* = ε′-jε"), complex modulus (M* = M’+jM’‘), dielectric loss tangent, and conductivity (σac) values were also calculated from the (C/G-f) measurements in the wide range of frequency(100Hz-1MHz). We observed that (Bi2Te3–Bi2O3-TeO2-PVP) interlayer may be a good alternative to the low-dielectric insulator prepared by traditional methods.