Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition

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ACAR S. , LİŞESİVDİN S. B. , Kasap M. , Oezcelik S. , Oezbay E.

THIN SOLID FILMS, cilt.516, sa.8, ss.2041-2044, 2008 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 516 Konu: 8
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1016/j.tsf.2007.07.161
  • Sayfa Sayıları: ss.2041-2044


Resistivity and Hall effect measurements on nominally undoped Al0.25Ga0.75N/GaN/AlN heterostructures grown on sapphire substrates prepared by metal organic chemical vapor deposition have been carried out as a function of temperature (20-300 K) and magnetic field (0-1.4 T). Variable magnetic field Hall data have been analyzed using the improved quantitative mobility spectrum analysis technique. The mobility and density of the two-dimensional electron gas at the AlGaN/GaN interface and the two-dimensional hole gas at the GaN/AIN interface are separated by quantitative mobility spectrum analysis. The analysis shows that two-channel conduction is present in nominally undoped Al0.25Ga0.75N/GaN/AlN heterostructures grown on sapphire substrate. (c) 2007 Elsevier B.V All rights reserved.