The rapid visualization of resistivity inhomogeneities in high-resistivity semiconductor films

Salamov B., Civi M., Altindal Ş., Kasap M., BULUR E.

JOURNAL OF INFORMATION RECORDING, cilt.23, sa.5, ss.437-445, 1997 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 23 Sayı: 5
  • Basım Tarihi: 1997
  • Dergi Adı: JOURNAL OF INFORMATION RECORDING
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.437-445
  • Gazi Üniversitesi Adresli: Evet

Özet

This paper describes for the first time an application of an ionization type semiconductor photographic system using a chalcopyrite-type semiconductor (CuInSe2) copper-indium-diselenide film as a target for rapid visulization of resistivity inhomogeneities. The CuInSe2 semiconductor films with a resistivity of 10(7) Omega cm (thickness 0.25 mu m) in a planar gas discharge cell, have been studied. A measurement is realized by recording the spatial distribution of the gas discharge radiation intensity between two parallel electrodes. A gas discharge gap has been formed by a dielectric separator with thicknesses ranging from 40 to 60 mu m. A discharge has been realized in air at pressures from 760-60 Torr. The assessment of the resistivity inhomogeneities is then based on an analysis of the discharge radiation, visualized by a photograph taken through the SnO2 film.