Research Information System
Radiation Physics and Chemistry, vol.246, 2026 (SCI-Expanded, Scopus)
This study details the fabrication of Al/(DLC)/pSi structures and investigates their electrical− properties before and after exposure to 10 kGy of gamma radiation. The current-voltage (I-V) and impedance-voltage (C/G-V) characteristics were investigated over a ±4 V range. Key parameters, including saturation current ( I s ), ideality factor ( n ), zero - bias barrier height ( Φ BO), series & shunt resistances ( R s , R sh ), were extracted from forward-bias ln(I F ) vs V F plots using the thermionic−emission (TE) theory. Additionally, the concentration of acceptor atoms ( N A ), Fermi energy (EF), C-V barrier height ( Φ B(C−V) ), and depletion−layer width ( W d ) were determined from reverse bias 1/C2 - VR plots for both pristine and irradiated conditions at 0.5 MHz. The energy-dependent pattern of interface states or traps ( N ss −( E ss -E v )) was also obtained from the Ln(IF) vs VF data by considering the change in BH and n that depend on voltage. Additionally, the values of Φ B , n, and R s were calculated from the Cheungs’ and Norde functions as a second way to determine the discrepancies/differences between the calculated−technique and the voltage dependence of basic electrical parameters. The findings demonstrate that all these parameters are highly dependent on the radiation, voltage, and the specific calculation method used. The noticeable differences between the pre- & and post-irradiation results are attributed to the generation of N ss by gamma rays, along with the subsequent restructuring/reordering of them under the influence of the electric−field and their inherent voltage dependency.