Analysis of inhomogeneous device parameters using current-voltage characteristics of identically prepared lateral Schottky structures


Tugluoglu N., KORALAY H. , Akgul K. B. , Cavdar Ş.

INDIAN JOURNAL OF PHYSICS, cilt.90, ss.43-48, 2016 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 90 Konu: 1
  • Basım Tarihi: 2016
  • Doi Numarası: 10.1007/s12648-015-0722-8
  • Dergi Adı: INDIAN JOURNAL OF PHYSICS
  • Sayfa Sayıları: ss.43-48

Özet

We have identically fabricated 50 dots of Au/n-Si/Al Schottky structures and investigated the mean values of diode parameters from current-to-voltage (I-V) characteristics at 300 K. The values of diode parameters are determined from I-V characteristics, and Cheung and the modified Norde functions are varied from diode to diode although the Schottky structures are identically fabricated. The experimental values of ideality factor (n) and barrier height (Phi(B)) for 50 dots of the Au/n-Si/Al Schottky structures have ranged from 1.048 to 1.695 and from 0.708 to 0.807 eV, respectively. The interface state densities (N-ss) are approximately obtained from 2 x 10(13) to 2 x 10(11) eV(-1) cm(-2) in the energy range from E-c - 0.45 to E-c - 0.75 eV, respectively. These findings can be referred to lateral barrier inhomogeneities of Schottky diodes. The distributions of all calculated parameters have been fitted by means of Gaussian function. The mean n and Phi(B) values have been found to be 1.316 +/- 0.213 and 0.758 +/- 0.030 eV, respectively. Furthermore, the value of lateral homogenous barrier height for 50 dots of Schottky structures is determined as 0.802 eV from the linear relationship between n and Phi(B).