Analysis of admittance measurements of Al/Gr-PVA/p-Si (MPS) structure

Ata D., Yeriskin S. A., Tataroglu A., Balbasi M.

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, vol.169, 2022 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 169
  • Publication Date: 2022
  • Doi Number: 10.1016/j.jpcs.2022.110861
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Chemical Abstracts Core, INSPEC, Metadex
  • Keywords: MPS structure, Gr doped PVA, Admittance measurements, Frequency dependent, Interface states, Series resistance, INTERFACE-STATE DENSITY, ELECTRICAL CHARACTERISTICS, SEMICONDUCTOR STRUCTURES, CAPACITANCE, DIODE
  • Gazi University Affiliated: Yes


A metal-polymer-semiconductor (MPS) structure based on 5 wt% graphene (Gr) doped polyvinyl alcohol (PVA) thin film was fabricated by using the electrospinning method. Admittance (Y = G + i omega C) based measurements of Al/Gr-PVA/p-Si (MPS) structure were performed in the frequency range from 5 kHz to 5 MHz at room tem-perature. Significant shifts in capacitance (C) and conductance (G) characteristics were observed for the MPS structure. The C and G value decrease with increase in frequency. The variation of C and G with frequency comes from the existence of interface states. the interface state density (Nss) was estimated by various methods such as low-high frequency capacitance (CLF-CHF), Hill-Coleman and conductance. The Nss value obtained from all methods decreased as the frequency increased. Because as the frequency increases, the interface states cannot follow alternating current (ac) signal. Meanwhile, the measured capacitance and conductance were corrected taking into account the effect of series resistance (Rs).