The effects of preparation temperature on the main electrical parameters of Al/TiO2/p-Si (MIS) structures by using sol-gel method

Pakma O., Serin N., Serin T., Altindal Ş.

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, vol.50, no.1, pp.28-34, 2009 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 50 Issue: 1
  • Publication Date: 2009
  • Doi Number: 10.1007/s10971-009-1895-4
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.28-34
  • Keywords: Sol-gel method, Al/TiO2/p-Si (MIS) structures, Preparation temperature, Interface state density, Series resistance, TIO2 THIN-FILMS, VOLTAGE I-V, INTERFACE STATES, SCHOTTKY CONTACTS, DIODES, INHOMOGENEITIES, FABRICATION, FREQUENCY, TRANSPORT, DENSITY
  • Gazi University Affiliated: Yes


In this study, the forward bias current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Al/TiO2/p-Si (MIS) structures derived using the sol-gel method have been investigated and compared at various preparation temperatures. Experimental results show that the preparation temperatures strongly affect the electrical characteristics, such as ideality factor (n), zero-bias barrier height (phi(b0)), series resistance (R-s) and interface states (N-ss). The MIS structures show non-ideal behavior of I-V characteristics with an n varying between 2.17 and 4.61. We have found that the phi(b0) and Rs increase as the n decrease with increasing preparation temperature. The energy distribution profile of Nss of the Al/TiO2/p-Si (MIS) structures was obtained from the forward bias I-V characteristics by taking into account both the bias dependence of the effective barrier height (phi(e)) and Rs for various preparation temperatures. The values of N-ss increase from the midgap towards the top of valance band for various preparation temperatures.