Computational Exploration of Innovative Lead-Free DPs X2CdZnCl6 (X = Na and K) DFT Analysis of Optoelectronic, Mechanical and Thermoelectric Performance


Chebouki S., Nemiri O., Oumelaz F., Boudjaadar D., Boumaza A., Benredouane R., ...Daha Fazla

Advanced Theory and Simulations, cilt.8, sa.7, 2025 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 8 Sayı: 7
  • Basım Tarihi: 2025
  • Doi Numarası: 10.1002/adts.202401540
  • Dergi Adı: Advanced Theory and Simulations
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Compendex, INSPEC
  • Anahtar Kelimeler: DFT computation, double perovskites, thermoelectric, X2CdZnCl6 (X=Na and K)
  • Gazi Üniversitesi Adresli: Evet

Özet

Based on DFT computation, the physical properties of newlead-free double perovskites (DPs) X2CdZnCl6 (X = Na and K) is carried out within WIEN2K software. The measured formation energy (ΔEf) and tolerance factor indicate the cubic structure stabilities of investigated materials. The lattice parameters of the compounds Na2CdZnCl6 and K2CdZnCl6 are equal to 9.98 A° and 10.05 A°, respectively. The examination of the electronic structure through nKTB-mBJ demonstrates that lead free DPs X2CdZnCl6 (X = Na and K) exhibit semiconducting behavior with direct bandgap energy. The analysis of optical parameters reveal that the examined compounds have a stronger absorption property in UV region and make them well suited for photovoltaic devices and next-generation technologies. Additionally, using BoltzTrap code, the thermoelectric characteristics are thoroughly examined. The highest Seebeck coefficient values 218.32 and 254.29 µV K−1 for X = Na and K, respectively. According to calculations, the maximum ZT values of 0.7 for Na2CdZnCl6 and 0.73 for K2CdZnCl6 indicate their potential as promising materials for thermoelectric devices. The acquired figure of merit (ZT) values indictes that examined lead free DPs X2CdZnCl6 (X = Na and K) exhibit potential for implementation in thermoelectric devices.