Well parameters of two-dimensional electron gas in Al0.88In0.12N/AlN/GaN/AlN heterostructures grown by MOCVD


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Tasli P., LİŞESİVDİN S. B. , Yildiz A., Kasap M. , Arslan E., Ozcelik S. , ...More

CRYSTAL RESEARCH AND TECHNOLOGY, vol.45, no.2, pp.133-139, 2010 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 45 Issue: 2
  • Publication Date: 2010
  • Doi Number: 10.1002/crat.200900534
  • Title of Journal : CRYSTAL RESEARCH AND TECHNOLOGY
  • Page Numbers: pp.133-139

Abstract

Resistivity and Hall effect measurements were carried out as a function of magnetic field (0-1.5 T) and temperature (30-300 K) for Al0.88In0.12N/AlN/GaN/AlN heterostructurcs grown by Metal Organic Chemical Vapor Deposition (MOCVD). Magnetic field dependent Hall data were analyzed by using the quantitative mobility spectrum analysis (QMSA). A two-dimensional electron gas (2DEG) channel located at the Al0.88In0.12N/GaN interface with an AlN interlayer and a two-dimensional hole gas (2DHG) channel located at the GaN/AlN interface were determined for Al0.88In0.12N/AlN/GaN/AlN heterostructures. The interface parameters, such as quantum well width, the deformation potential constant and correlation length as well as the dominant scattering mechanisms for the Al0.88In0.12N/GaN interface with an AlN interlayer were determined from scattering analyses based on the exact 2DEG carrier density and mobility obtained with QMSA. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim