Akademik Veri Yönetim Sistemi
CERAMICS INTERNATIONAL, cilt.30, sa.8, ss.2203-2209, 2004 (SCI-Expanded)
The effect of alpha-Al2O3 addition on sintering and grain growth behaviour of high purity 8 mol% yttria-stabilised cubic zirconia (c-ZrO2) was investigated. For these purposes, 1 wt.% alpha-Al2O3 was selected as a dopant in c-ZrO2. The slip-cast specimens were sintered at different temperatures between 1150 and 1400degreesC. It was seen that doped c-ZrO2 had a faster sintering rate and lower sintering temperature than undoped c-ZrO2. In particular, doped c-ZrO2 achieved a density of 95% of its theoretical value at 1275degreesC, while undoped c-ZrO2 reached the same value at 1325degreesC. The different sinterability of doped c-ZrO2 and undoped c-ZrO2 can be attributed to their different behaviour of grain growth. For grain growth measurements, the specimens sintered at 1400degreesC were annealed at 1400, 1500 and 1600degreesC for 10, 30 and 66 h. It was seen that grain growth rate could be controlled by the deliberate addition of 1 wt.% grain boundary phase of alpha-Al2O3. A grain growth exponent of 2 and activation energy for grain growth of 298 kJ/mol were obtained for undoped c-ZrO2. The alpha-Al2O3 containing specimens had a grain growth exponent of 3 and activation energy of 361 kJ/mol. The slow grain growth in doped c-ZrO2 is attributed to solute ions segregation in grain boundary region. The addition of the grain boundary phase results in limiting matter transfer along the grain boundary resulting in slower grain growth. (C) 2004 Elsevier Ltd and Techna S.r.l. All rights reserved.