Frequency dependent dielectric properties and electrical conductivity of platinum silicide/Si contact structures with diffusion barrier
MICROELECTRONIC ENGINEERING, cilt.93, ss.50-55, 2012 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 93
- Basım Tarihi: 2012
- Doi Numarası: 10.1016/j.mee.2011.05.041
- Dergi Adı: MICROELECTRONIC ENGINEERING
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.50-55
- Anahtar Kelimeler: Silicide-silicon contact, Al-TiW-PtSi/n-Si Schottky diodes, Dielectric properties, Electric modulus, ac electrical conductivity, INTERFACE STATES, C-V, AC CONDUCTIVITY, SILICON, OXIDE, TEMPERATURE, RESISTANCE, IMPEDANCE, MODEL, FILMS
- Gazi Üniversitesi Adresli: Evet
Özet
Unlike a conventional metal-Si compounds/Si structure, a thin film TiW alloy was deposited on PtSi/n-Si to form a diffusion barrier between aluminum (Al) and PtSi/n-Si. Dielectric properties and electrical conductivity of contact structures have been investigated in detail by using experimental C-V and G-V mea, surements in the frequency range of 3 kHz-5 MHz and voltage range of -2-4 V. Experimental results indicate that the values of epsilon' show a steep decrease with increasing frequency for each voltage. On the other hand, the values of epsilon '' versus voltage curves show a jump, and epsilon '' decreases with decreasing voltage and increasing frequency.