Frequency dependent dielectric properties and electrical conductivity of platinum silicide/Si contact structures with diffusion barrier

Afandiyeva I. M., Bulbul M. M., Altindal Ş., Bengi S.

MICROELECTRONIC ENGINEERING, vol.93, pp.50-55, 2012 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 93
  • Publication Date: 2012
  • Doi Number: 10.1016/j.mee.2011.05.041
  • Journal Name: MICROELECTRONIC ENGINEERING
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.50-55
  • Keywords: Silicide-silicon contact, Al-TiW-PtSi/n-Si Schottky diodes, Dielectric properties, Electric modulus, ac electrical conductivity, INTERFACE STATES, C-V, AC CONDUCTIVITY, SILICON, OXIDE, TEMPERATURE, RESISTANCE, IMPEDANCE, MODEL, FILMS
  • Gazi University Affiliated: Yes

Abstract

Unlike a conventional metal-Si compounds/Si structure, a thin film TiW alloy was deposited on PtSi/n-Si to form a diffusion barrier between aluminum (Al) and PtSi/n-Si. Dielectric properties and electrical conductivity of contact structures have been investigated in detail by using experimental C-V and G-V mea, surements in the frequency range of 3 kHz-5 MHz and voltage range of -2-4 V. Experimental results indicate that the values of epsilon' show a steep decrease with increasing frequency for each voltage. On the other hand, the values of epsilon '' versus voltage curves show a jump, and epsilon '' decreases with decreasing voltage and increasing frequency.