The analysis of current-voltage (I-V) characteristics of schottky diode in terms of Gaussian distribution of barrier height


Doekme İ.

6th International Conference of the Balkan-Physical-Union, İstanbul, Turkey, 22 - 26 August 2006, vol.899, pp.594 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 899
  • Doi Number: 10.1063/1.2733335
  • City: İstanbul
  • Country: Turkey
  • Page Numbers: pp.594

Abstract

In this work, I-V characteristics of Al/p-Si Schottky (SD) diode were measured in the temperature range of 178-440 K. Obtained data were analyzed a Gaussian distribution of the barrier height (BH). It has been concluded that the temperature dependence of the forward I-V characteristics of the Schottky barrier diodes can be explained on the basis of thermionic emission (TE) mechanism with a Gaussian distribution of the barrier heights.