The analysis of current-voltage (I-V) characteristics of schottky diode in terms of Gaussian distribution of barrier height

Doekme İ.

6th International Conference of the Balkan-Physical-Union, İstanbul, Türkiye, 22 - 26 Ağustos 2006, cilt.899, ss.594 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 899
  • Doi Numarası: 10.1063/1.2733335
  • Basıldığı Şehir: İstanbul
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.594
  • Gazi Üniversitesi Adresli: Evet

Özet

In this work, I-V characteristics of Al/p-Si Schottky (SD) diode were measured in the temperature range of 178-440 K. Obtained data were analyzed a Gaussian distribution of the barrier height (BH). It has been concluded that the temperature dependence of the forward I-V characteristics of the Schottky barrier diodes can be explained on the basis of thermionic emission (TE) mechanism with a Gaussian distribution of the barrier heights.