Analysis of ternary InGaN layers grown by atmospheric pressure vertical MOVPE

YILDIZ A., ÖZTÜRK M. A., KASAP M.

6th International Conference of the Balkan-Physical-Union, İstanbul, Türkiye, 22 - 26 Ağustos 2006, cilt.899, ss.672 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 899
  • Doi Numarası: 10.1063/1.2733413
  • Basıldığı Şehir: İstanbul
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.672
  • Gazi Üniversitesi Adresli: Evet

Özet

We present a study on the n-type ternary InGaN epilayers grown by atmospheric pressure vertical metal organic chemical vapor deposition on GaN template/(0001) sapphire substrate. An investigation in the different growth conditions on n-type InGa1-xN (x=0.120 and 0.09) alloys is made for two samples. Structural and electrical properties were characterized by High X-Ray Diffraction and Hall effect respectively.