Al/(S:DLC)/p-Si/Au (MIS) structure-based temperature sensors for moderate and high temperatures at enough high frequencies (0.1, 0.5, and 1 MHz)

Balcı E., Vahid A. F., ALTINDAL Ş.

Diamond and Related Materials, cilt.154, 2025 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 154
  • Basım Tarihi: 2025
  • Doi Numarası: 10.1016/j.diamond.2025.112229
  • Dergi Adı: Diamond and Related Materials
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Activation energy and series resistance, Capacitance and conductance versus voltage characteristics, Conduction mechanisms, Temperature sensing applications
  • Gazi Üniversitesi Adresli: Evet

Özet

In this present study, Al/p-Si/Au (MS) structure with Sulphur-doped diamond-like carbon (S:DLC) were fabricated. In order to obtain more information on the electrical parameters and formation natural barrier height (BH) of them, the impedance-voltage-temperature (C/G[sbnd]V[sbnd]T) measurements were performed both in wide temperature range of 200–440 K and voltage range of -5 V/+8 V for three different-frequencies (0.1, 0.5, 1 MHz). The C/G-V curves show an anomalous peak especially at moderate and high temperatures. While the peak value inclines with inclining temperature, its position shift towards to negative-voltages due to the rearrangement of the interface-states (Nss) under influence of temperature and electric-field. Some important electrical-parameters like density of NA, Fermi-level (EF), ΒΗ, and thickness of depletion-region (WD) were obtained from the intercept and slope of the C−2 vs V curve as function of temperature. The voltage dependent distribution of Nss was extracted from the Hill-Coleman and low-high temperature models. The ln(σ) vs q/kT plot shows to two different linear regions, indicating two-different transmission mechanisms both at lower and higher temperatures. The temperature sensitivity coefficient was also extracted from V vs T plots at 0.7 nF as 29 mV/K at 0.5 MHz and this value shows us that the prepared structures can also be used as temperature sensors.