The investigation of main electrical parameters, energy dependent profiles of surface states and their lifetimes in the Au/n-Si Schottky diodes with (PVA-Fe<sub>3</sub>O<sub>4</sub>) interlayer depend on frequency and voltage

YILDIZ K., Khalkhali A., Uzun A., Tanrikulu E., Yeriskin S., Alsac A. A.

PHYSICA SCRIPTA, cilt.100, sa.1, 2025 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 100 Sayı: 1
  • Basım Tarihi: 2025
  • Doi Numarası: 10.1088/1402-4896/ad9ef7
  • Dergi Adı: PHYSICA SCRIPTA
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Chemical Abstracts Core, Compendex, INSPEC, zbMATH
  • Gazi Üniversitesi Adresli: Hayır

Özet

In this article, the impedance-voltage-frequency (Z-V-f) measurements of the fabricated Au/(PVA-Fe3O4)/n-Si SDs have been performed between 0.1 kHz and 1 MHz, and in the +/- 3 V range. Main important electronic parameters of the Schottky diode (SD) like diffusion - potential (V-D), Fermi - energy (E-F), barrier - height (Phi(B)), depletion layer (W-D), and max. electric field (E-m) were extracted from the reverse bias 1/C-2 - V plots in a wide frequency range. The voltage-reliant variations of the surface states (N-ss) have been calculated by using low-high frequency capacitance (C-LF-C-HF), and parallel conductance or admittance models and compared to each other. The voltage-reliant resistance profile of R-i has also been obtained from the Nicollian & Brews method for all frequencies. All these results indicate that these main electrical parameters are strongly dependent on voltage and frequency due to the existence of N-ss, their lifetimes (tau), interfacial organic layer, R-s, interface, and dipole polarizations. But, while N-ss is effective, both in depletion and inversion regions, R-s is dominant at the strong-accumulation region at high enough frequency.