The effects of surface states and series resistance on the performance of Au/SnO2/n-Si and Al/SnO2/p-Si (MIS) Schottky barrier diodes

Yildiz D. E., Altindal Ş., Tekeli Z., Ozer M.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.13, sa.1, ss.34-40, 2010 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 13 Sayı: 1
  • Basım Tarihi: 2010
  • Doi Numarası: 10.1016/j.mssp.2010.02.004
  • Dergi Adı: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.34-40
  • Anahtar Kelimeler: Au/SnO2/n-Si and Al/SnO2/p-Si SBDs, Surface states, Series resistance, Insulator layer, I-V-T characteristics, CURRENT-TRANSPORT MECHANISM, TEMPERATURE-DEPENDENCE, INTERFACE STATES, INTERSECTING BEHAVIOR, V CHARACTERISTICS, INSULATOR LAYER, HEIGHT, IV, PARAMETERS, BIAS
  • Gazi Üniversitesi Adresli: Evet

Özet

We have fabricated two types of Schottky barrier(SBDs),Au/SnO2/n-Si (MIS1) and Al/SnO2/p-Si (MIS2), to investigate the surface (N-ss) and series resistance (R-s) effect on main electrical parameters such as zero-bias barrier height (phi(Bo)) and ideality factor (n) for these SBDs. The forward and reverse bias current-voltage (I-V) characteristics of them were measured at 200 and 295 K, and experimental results were compared with each other. At temperatures of 200 and 295 K, phi(Bo), N-ss and R-s for MIS1 Schottky diodes (SDs) ranged from 0.393 to 0.585 eV, 5.70 to 4.75, 5.42 x 10(13) to 4.27 x 10(13) eV(-1) cm(-2) and 514 to 388 Omega, respectively, whereas for MIS2 they ranged from 0.377 to 0.556 eV, 3.58 to 2.1, 1.25 x 10(14) to 3.30 x 10(14) eV(-1) cm(-2) and 312 to 290 Omega, respectively. The values of n for two types of SBDs are rather than unity and this behavior has been attributed to the particular distribution of N-ss and interfacial insulator layer at the metal/semiconductor interface. In addition, the temperature dependence energy density distribution profiles of N-ss for both MIS1 and MIS2 SBDs were obtained from the forward bias I-V characteristics by taking into account the bias dependence of effective barrier height (phi(e)) and R-s. Experimental results show that both N-ss and R-s values should be taken into account in the forward bias I-V characteristics. It has been concluded that the p-type SBD (MIS2) shows a lower barrier height (BH), lower R-s, n and N-ss compared to n-type SBD (MIS1), which results in higher current at both 200 and 295 K. 2010 Elsevier Ltd. All rights reserved.