The effects of frequency and gamma-irradiation on the dielectric properties of MIS type Schottky diodes


TATAROĞLU A. , Altindal Ş.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, cilt.254, sa.1, ss.113-117, 2007 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 254 Konu: 1
  • Basım Tarihi: 2007
  • Doi Numarası: 10.1016/j.nimb.2006.10.066
  • Dergi Adı: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
  • Sayfa Sayıları: ss.113-117

Özet

The effects of gamma-irradiation on the dielectric properties of Al/SiO2/p-Si (MIS) Schottky diodes were investigated using capacitance-voltage (C-V) and conductance voltage (G/omega-V) characteristics. Before irradiation, the C-V and G/omega-V characteristics were measured by applying a small ac signal of 50 mV amplitude and 100 Hz-1 MHz frequencies, while the dc voltage was swept from positive bias to negative bias for MIS Schottky diodes. Afterwards, the C-V and G/omega-V measurements carried out at various radiation doses and 1 MHz. The MIS Schottky diodes were exposed to a Co-60 gamma-radiation source at a dose of 2.12 kGy/h and the total dose range was from zero to 450 kGy. The dielectric constant (epsilon'), dielectric loss (epsilon"), loss tangent (tan delta) and ac electrical conductivity (sigma(ac)) were calculated from the C-V and G/omega-V measurements and plotted as a function of frequency and radiation dose. Experimental results show that the epsilon' and epsilon" were found to decrease with increasing frequency while increase with increasing radiation dose. In addition, tan delta versus log f show a peak, which was not present in the tan delta versus radiation dose. Also, the sigma(ac) is found to increase with increasing radiation dose. These changes were attributed to mobile charge carriers or dipolar molecules generated by structural changes in the irradiated samples. (c) 2006 Elsevier B.V. All rights reserved.