FREQUENCY DEPENDENT DIELECTRIC PROPERTIES OF ATOMIC LAYER DEPOSITION GROWN ZINC-OXIDE BASED MIS STRUCTURE

Bilge Ocak S., Orhan E.

6. EUROPEAN CONFERENCE ON RENEWABLE ENERGY SYSTEMS , İstanbul, Türkiye, 25 - 27 Haziran 2018, ss.35-37

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Basıldığı Şehir: İstanbul
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.35-37
  • Gazi Üniversitesi Adresli: Evet

Özet

Frequency dependent dielectric properties of Zinc oxide (ZnO) based metal-insulator-semiconductor (MIS) structure was studied. The ZnO thin layer on p-type silicon (100) was prepared by using atomic layer deposition (ALD). The voltage and frequency dependent dielectric loss tangent (tan), dielectric loss (ε''), dielectric constant (ε'), electrical conductivity (ac) and electrical modulus (M' and 'M') of these structure have been studied in detail by using spectroscopic technique in the various applied bias voltages and frequencies at room temperature. According to experimental results, ac , M', ε', ε', tan, M'' and values were strongly depend on frequency and applied voltage in accumulation and depletion region. While the values of ε' reduce with increasing frequency for each applied voltage, ε'' values decreases with increasing frequency and decreasing voltage. The ac is observed to weak increase with increasing frequency. M' values increase with increasing frequency. The values of M'' give a peak and the peak location moves to higher frequency with rising applied voltage. The results confirmed that interfacial polarization can be readily ingenerated at low frequency and interface states located in the metal-semiconductor interface have an influence on the dielectric properties of Al/ZnO/p-Si structures