Akademik Veri Yönetim Sistemi
6. EUROPEAN CONFERENCE ON RENEWABLE ENERGY SYSTEMS, İstanbul, Türkiye, 25 - 27 Haziran 2018, ss.32-34
We study on the effect of temperature and frequency on capacitance and conductance characteristics of ZnO
based Al/ZnO/p-Si (MIS) structure. Before processing the wafer, Radio Corporation of America (RCA)
cleaning procedures were applied for removing organic residues from p-type Si wafer. The wafer’s back
surface was coated with Al with 124 nm thickness under the room temperature once more in order to finish
the ohmic contact. The ZnO thin layer on the p-type silicon (100) substrate was fabricated by atomic layer
deposition (ALD). The surface characteristics of thin film was detected by atomic force microscopy (AFM)
and secondary ion mass spectrometry (SIMS).It was clearly seen that the distribution of the both Zn and O
was uniform throughout the depth of the achieved film. The electrical properties of the MIS structure have
been investigated by using temperature and frequency dependent admittance voltage (C/G-V) measurements
at temperatures below 300 K temperature for 50 kHz, 100 kHz, and 500 kHz by using the capacitance-voltage
(C-V) and conductance-voltage (G-V) measurements